STW48N60M2-4 数据手册
其他文档
STW48N60M2-4 12 pages
技术规格
- RoHS: true
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: STMicroelectronics STW48N60M2-4
- Power Dissipation (Pd): 300W
- Total Gate Charge (Qg@Vgs): 70nC@10V
- Input Capacitance (Ciss@Vds): 3060pF@100V
- Continuous Drain Current (Id): 42A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Reverse Transfer Capacitance (Crss@Vds): -
- Drain Source On Resistance (RDS(on)@Vgs,Id): 70mΩ@21A,10V
- Package: TO-247-4
- Manufacturer: STMicroelectronics
- Series: MDmesh™ M2
- Packaging: Tube
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 70mOhm @ 21A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 3060pF @ 100V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4L
- Package / Case: TO-247-4
- Base Part Number: STW48N
- detail: N-Channel 600V 42A (Tc) 300W (Tc) Through Hole TO-247-4L